Influence of Chemical Cleaning Procedures and Thermal Oxidation Processes on the Uniformity of MOS Gate Oxides on Abrupt Steps on Silicon Surfaces. Journal of Science & Sustainable Engineering , [S. l.], v. 1, n. 1, 2023. DOI: 10.34024/jsse.2023.v1.15261. Disponível em: https://periodicos.unifesp.br/jsse/article/view/15261. Acesso em: 29 sep. 2026.